Toshiba Releases Power MOSFETs with High-Speed Diodes that Help to Improve Efficiency of Power Supplies
이 글자크기로 변경됩니다.
(예시) 가장 빠른 뉴스가 있고 다양한 정보, 쌍방향 소통이 숨쉬는 다음뉴스를 만나보세요. 다음뉴스는 국내외 주요이슈와 실시간 속보, 문화생활 및 다양한 분야의 뉴스를 입체적으로 전달하고 있습니다.
KAWASAKI, Japan -- Businesswire -- Toshiba Electronic Devices & Storage Corporation (https://cts.businesswire.com/ct/CT?id=smartlink&url=https%3A%2F%2Ftoshiba.semicon-storage.com%2Fap-en%2Ftop.html&esheet=53899054&newsitemid=20240221220621&lan=en-US&anchor=Toshiba+Electronic+Devices+%26amp%3B+Storage+Corporation&index=1&md5=c303f94a4f998b168fb1b5972f301af4) (“Toshiba”) has added DTMOSVI(HSD), power MOSFETs with high-speed diodes suitable for switching power supplies, including data centers and photovoltaic power conditioners, to its latest-generation[1] DTMOSVI series with a super junction structure. Shipments of the first two products “TK042N65Z5 (https://cts.businesswire.com/ct/CT?id=smartlink&url=https%3A%2F%2Ftoshiba.semicon-storage.com%2Finfo%2Flookup.jsp%3Fpid%3DTK042N65Z5&esheet=53899054&newsitemid=20240221220621&lan=en-US&anchor=TK042N65Z5&index=2&md5=d11095b38510fcb361ebe04304478a5d)” and “TK095N65Z5 (https://cts.businesswire.com/ct/CT?id=smartlink&url=https%3A%2F%2Ftoshiba.semicon-storage.com%2Finfo%2Flookup.jsp%3Fpid%3DTK095N65Z5&esheet=53899054&newsitemid=20240221220621&lan=en-US&anchor=TK095N65Z5&index=3&md5=dbe5cb42d6b967b6084beaf242343c60),” 650V N-channel power MOSFETs in TO-247 packages, start today.
The new products use high-speed diodes to improve the reverse recovery[2] characteristics important for bridge circuit and inverter circuit applications. Against the standard DTMOSVI, they achieve a 65% reduction in reverse recovery time (trr), and an 88% reduction in reverse recovery charge (Qrr) (measurement conditions: -dIDR/dt= 100A/μs).
The DTMOSVI(HSD) process used in the new products improves on the reverse recovery characteristics of Toshiba’s DTMOSIV series with high-speed diodes (DTMOSIV(HSD)), and has a lower drain cut-off current at high temperatures. The figure of merit “drain-source On-resistance × gate-drain charges” is also lower. The high temperature drain cut-off current of TK042N65Z5 is approximately 90%[3] lower, and the drain-source On-resistance × gate-drain charge 72% lower, than in Toshiba’s current TK62N60W5[4] [5]. This advance will cut equipment power loss and help to improve efficiency. The TK042N65Z5 shows a maximum improvement in power supply efficiency over the current TK62N60W5 of about 0.4%, as measured in a 1.5kW LLC circuit[6].
A reference design, “1.6kW Server Power Supply (Upgraded) (https://cts.businesswire.com/ct/CT?id=smartlink&url=https%3A%2F%2Ftoshiba.semicon-storage.com%2Fad%2Fsemiconductor%2Fdesign-development%2Freferencedesign%2Fdetail.RD240.html%3Futm_source%3DPDF_RD%26utm_medium%3Dcontent%26utm_campaign%3Drd240nr&esheet=53899054&newsitemid=20240221220621&lan=en-US&anchor=1.6kW+Server+Power+Supply+%28Upgraded%29&index=4&md5=fabc3b8c3524129d9f900834d3bbe340)”, that uses TK095N65Z5 is available on Toshiba’s website today. The company also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba plans to expand the DTMOSVI(HSD) line-up with the release of devices in TO-220 and TO-220SIS through-hole packages, and TOLL and DFN 8×8 surface-mount packages.
The company also will continue to expand its line-up of the DTMOSVI series beyond the already released 650V and 600V products and the new products with high-speed diodes. This will enhance switching power supply efficiency, contributing to energy-saving equipment.
Notes: [1] As of February 22, 2024, Toshiba survey. [2] A switching action in which the MOSFET body diode switches from forward to reverse biased. [3] Values measured by Toshiba. The new products TK042N65Z5 is 0.2mA (test condition: VDS=650V, VGS=0V, Ta=150°C.) The existing products TK62N60W5 is 1.9mA (test condition: VDS=600V, VGS=0V, Ta=150°C). [4] 600V DTMOSIV(HSD) series [5] Values measured by Toshiba. Test condition: TK62N60W5 · RDS(ON): ID=30.9A, VGS=10V, Ta=25°C · Qgd: VDD=400V, VGS=10V, ID=61.8A, Ta=25°C TK042N65Z5 · RDS(ON): ID=27.5A, VGS=10V, Ta=25°C · Qgd: VDD=400V, VGS=10V, ID=55A, Ta=25°C [6] Values measured by Toshiba. Test condition: Vin=380V, Vout=54V, Ta=25°C
Applications
Industrial equipment
· Switching power supplies (data center servers, communications equipment, etc.) · EV charging stations · Power conditioners for photovoltaic generators · Uninterruptible power systems
Features
· MOSFETs with high-speed diodes in the latest-generation DTMOSVI series · Reverse recovery time due to high-speed diodes: TK042N65Z5 trr=160ns (typ.) TK095N65Z5 trr=115ns (typ.) · High-speed switching time due to low gate-drain charge: TK042N65Z5 Qgd=35nC (typ.) TK095N65Z5 Qgd=17nC (typ.)
Main Specifications
(To view the table, please visit https://www.businesswire.com/news/home/20240221220621/en/)
Follow the links below for more on the new products. TK042N65Z5 (https://cts.businesswire.com/ct/CT?id=smartlink&url=https%3A%2F%2Ftoshiba.semicon-storage.com%2Finfo%2Flookup.jsp%3Fpid%3DTK042N65Z5&esheet=53899054&newsitemid=20240221220621&lan=en-US&anchor=TK042N65Z5&index=7&md5=05a685c60c2f3f7d585ace88c7389c64) TK095N65Z5 (https://cts.businesswire.com/ct/CT?id=smartlink&url=https%3A%2F%2Ftoshiba.semicon-storage.com%2Finfo%2Flookup.jsp%3Fpid%3DTK095N65Z5&esheet=53899054&newsitemid=20240221220621&lan=en-US&anchor=TK095N65Z5&index=8&md5=79df12e5a21792152cde621b84759539)
Follow the link below for more on Toshiba MOSFETs. MOSFETs (https://cts.businesswire.com/ct/CT?id=smartlink&url=https%3A%2F%2Ftoshiba.semicon-storage.com%2Fap-en%2Fsemiconductor%2Fproduct%2Fmosfets.html&esheet=53899054&newsitemid=20240221220621&lan=en-US&anchor=MOSFETs&index=9&md5=9b0d0badf2354acf2ef3119104f8a75e)
* Company names, product names, and service names may be trademarks of their respective companies. * Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.
About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.
The company’s 21,500 employees around the world share a determination to maximize product value, and promote close collaboration with customers in the co-creation of value and new markets. With annual sales approaching 800-billion yen (US$6.1 billion), Toshiba Electronic Devices & Storage Corporation looks forward to building and to contributing to a better future for people everywhere.
Find out more at https://toshiba.semicon-storage.com/ap-en/top.html
View source version on businesswire.com: https://www.businesswire.com/news/home/20240221220621/en/
이 뉴스는 기업·기관·단체가 뉴스와이어를 통해 배포한 보도자료입니다.
출처:Toshiba Electronic Devices & Storage Corporation
보도자료 통신사 뉴스와이어(www.newswire.co.kr) 배포
Copyright © 뉴스와이어. 무단전재 및 재배포 금지.
- 의료관광객 유치 확대 및 제도 개선 위한 ‘2024 한국의료관광’ 포럼 열려 - 뉴스와이어
- ‘제1회 모델코리아 포토캠프’ 성황리에 개최 - 뉴스와이어
- HD현대일렉트릭, 유럽 최대 전력수출국 스웨덴 시장 첫 진출 - 뉴스와이어
- 동구바이오제약, 퀀텀점프를 위한 생산 인프라 고도화 - 뉴스와이어
- 한국수자원공사, 스타트업 코리아 투자 위크 통해 물산업 창업생태계 확장에 박차 - 뉴스와이어
- 한율, 역사와 전통의 K캐릭터 ‘아기공룡 둘리’와 한정판 출시 - 뉴스와이어
- 씨이랩-시옷, AI와 보안 기술 융합을 위한 전략적 MOU 체결 - 뉴스와이어
- 인공지능 학습 원천데이터 제공 및 이용 활성화를 위한 공모전 개최 - 뉴스와이어
- 와코모터스, 신제품 X10 론칭 예고 - 뉴스와이어
- 9월 서울, 세계인이 주목하는 ‘미술도시’로 변신한다 - 뉴스와이어