DB HiTek accelerates GaN, SiC power semiconductor development

[Courtesy of DB HiTek]

DB HiTek Co., a South Korean semiconductor contract manufacturing and design company, announced Wednesday that it is ramping up its efforts to develop next-generation gallium nitride (GaN) and silicon carbide (SiC) power semiconductor devices by introducing core equipment needed for manufacturing.

GaN and SiC semiconductors are more resistant to high voltages, high frequencies, and high temperatures than conventional silicon-based semiconductors, and thus have higher power efficiency. For this reason, they are increasingly in demand in areas such as electric vehicles, renewable energy, fast charging, and 5G (fifth generation) technology.

DB HiTek is collaborating with GaN fabless company A-PRO Semicon Co. to improve the foundry process, while it works with Busan Techno Park on SiC development as part of a national policy project.

SiC wafers, which are used in electric vehicle inverters, are mainly six inches in diameter given the high technical difficulty in production, but DB HiTek’s strategy is to increase its market share of eight-inch wafers by entering the market early.

“We will prepare for the future by expanding our power semiconductor lineup, which is our flagship business where we have a competitive edge, while also focusing on GaN and SiC,” DB HiTek said.