SK hynix unveils world’s first 321-layer NAND

SK hynix Inc.’s 321-layer NAND. [Courtesy of SK hynix]

SK hynix Inc. on Wednesday unveiled the 321-layer NAND, marking the industry’s first NAND with more than 300 layers.

During the Flash Memory Summit that is taking place in Santa Clara in the U.S., SK hynix unveiled samples of its 321-layer NAND flash. The South Korean company plans to launch mass production in the first half of 2025 after enhancing quality.

NAND flash is a type of memory chip that retains data even when power is turned off. Stacking technology, which vertically arranges cells to increase data capacity, is a critical competitive factor, and there has been a fierce competition to develop ultra-high-layer NAND stacking technology.

More layers of memory cells allow larger capacity that can be produced on a single wafer.

The 300-layer milestone is considered a major threshold in the industry.

“With timely introduction of the high-performance and high-capacity NAND, we will strive to meet the requirements of the AI era and continue to lead innovation,” said Choi Jung-dal, head of NAND development at SK hynix.

Samsung Electronics Co. also began mass production of 236-layer NAND flash in November last year and announced plans to mass produce products with over 300 layers next year.

The company said that it plans to introduce a 1,000-layer product by 2030 after securing cost competitiveness.