Transphorm Announces Low-Cost Driver Solution for SuperGaN FETs
전체 맥락을 이해하기 위해서는 본문 보기를 권장합니다.
"Our normally-off GaN platform is preferable given its ability to work with well-known off-the-shelf drivers. The ability to use a select driver is a major advantage. It allows customers to choose drivers based on varying degrees of performance benefits while retaining more control over the power system's cost. This is particularly important for price sensitive end markets," said Philip Zuk, Senior Vice President, Business Development and Marketing, Transphorm. "With Transphorm's devices that deliver fundamentally higher performance, customers can build a BOM based on the end result they need, reaching the required performance as cost-effectively as possible."
이 뉴스는 기업·기관·단체가 뉴스와이어를 통해 배포한 보도자료입니다.
이 글자크기로 변경됩니다.
(예시) 가장 빠른 뉴스가 있고 다양한 정보, 쌍방향 소통이 숨쉬는 다음뉴스를 만나보세요. 다음뉴스는 국내외 주요이슈와 실시간 속보, 문화생활 및 다양한 분야의 뉴스를 입체적으로 전달하고 있습니다.
GOLETA, Calif. -- Businesswire -- Transphorm, Inc. (Nasdaq: TGAN)—a global leader in GaN, the future of next generation power systems—released details on a high-performance, low-cost driver solution. For use in low- to mid-power applications such as LED lighting, charging, microinverters, UPSes, and gaming computers, the design option strengthens the company’s value proposition for customers in those segments of the $3 billion power market.
Unlike competing e-mode GaN solutions that require custom drivers or level shifting circuitry with gate protection devices, Transphorm’s SuperGaN® FETs are known for easy drivability given they pair with off-the-shelf drivers. This capability adds to the cost advantages customers gain when using Transphorm devices. The newly defined solution uses a high-speed, non-isolated, high-voltage half-bridge gate driver that further reduces total system cost without affecting the GaN FET’s or system’s performance.
“Our normally-off GaN platform is preferable given its ability to work with well-known off-the-shelf drivers. The ability to use a select driver is a major advantage. It allows customers to choose drivers based on varying degrees of performance benefits while retaining more control over the power system’s cost. This is particularly important for price sensitive end markets,” said Philip Zuk, Senior Vice President, Business Development and Marketing, Transphorm. “With Transphorm’s devices that deliver fundamentally higher performance, customers can build a BOM based on the end result they need, reaching the required performance as cost-effectively as possible.”
Transphorm also recommends various other drivers that feature high isolation voltage ratings (control-to-output drive signals), short propagation delay times, fast turn on/off times, and programmable deadtime among other advantages—making them well-suited for higher power applications.
Low- to mid-power applications such as power adapters, gaming laptop chargers, LED lighting, and two- and three-wheeler chargers are price sensitive. The power systems in these types of products do not typically require advanced features like safety isolation. Therefore, using premium drivers may unnecessarily increase the cost of the bill of materials (BOM).
Performance Analysis
The half-bridge gate driver was tested with the TP65H070LSG, Transphorm’s 650 V, 72 mΩ device in a PQFN88 package. It can be used in bridge topologies such as resonant half-bridge, totem-pole PFC, sine-wave inverter, or active clamp flyback.
Test results show that the low-cost driver solution performs well at switching frequencies that are less than/equal to 150 kHz with or without the use of a heatsink or forced air for cooling. The solution ultimately achieved close to 99 percent efficiency in select configurations.
Application Note Access
For more details about the above solution, download the AN0014 application note titled Low Cost, High Density, High Voltage Silicon Driver for Low- to Mid-Power GaN FET Applications here: https://bit.ly/3MTfQtB.
About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations move power electronics beyond the limitations of silicon to achieve over 99% efficiency, 50% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit www.transphormusa.com. Follow us on Twitter @transphormusa and WeChat @ Transphorm_GaN.
The SuperGaN mark is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.
View source version on businesswire.com: https://www.businesswire.com/news/home/20230608005326/en/
이 뉴스는 기업·기관·단체가 뉴스와이어를 통해 배포한 보도자료입니다.
출처:Transphorm, Inc.
보도자료 통신사 뉴스와이어(www.newswire.co.kr) 배포
Copyright © 뉴스와이어. 무단전재 및 재배포 금지.
- 삼성전자, 케이뱅크와 손잡고 ‘세상 편한 AI 라이프 챌린지박스’ 선보여 - 뉴스와이어
- 투썸플레이스, 비비와 함께한 ‘아박’ 광고 조회수 1000만 뷰 돌파 - 뉴스와이어
- 예술시장 진입을 위한 역량 강화 프로그램 ‘2024 청년예술가 역량강화 교육 기·성악 부문’ 참
- 아로마티카, 국내 뷰티 브랜드 최초 SBTi 승인 획득 - 뉴스와이어
- 압타머사이언스, 혈액 기반 폐암진단키트 인도시장 진출 위한 MOU 체결 - 뉴스와이어
- 동구바이오제약, 세계 최초 조루 복합제 ‘구세정’ 출시 예정 - 뉴스와이어
- LIG넥스원, 합동군사대와 ‘미래 국방 군사전문가 육성 MOU’ 체결 - 뉴스와이어
- RWS 코리아, 최첨단 AI 탑재 번역툴 ‘트라도스 스튜디오 2024’ 출시 - 뉴스와이어
- LS일렉트릭-유니슨, 국산 풍력발전 기술경쟁력 강화 맞손 - 뉴스와이어
- 동원산업, 30g씩 소포장해 편의성 높인 ‘짜먹는 간편 명란’ 출시 - 뉴스와이어