Samsung Electronics develops world’s first 12mn-class DRAM chip

16 Gb DDR5 DRAM built on the industry’s first 12 nm-class process technology [Source : Samsung Electronics]

Samsung Electronics Co. developed 16-gigabit (Gb) DDR5 DRAM memory chip built on the industry’s first 12-nanometer (nm)-class process technology, vowing to overcome a weak chip market through its technological prowess.

On Wednesday, Samsung announced the development of its 16 Gb DDR5 and the completion of product evaluation for compatibility with Advanced Micro Devices Inc., a U.S. semiconductor firm. DDR5, a type of synchronous dynamic random-access memory, consumes less power than its predecessor, DDR4, while doubling bandwidth.

Previously, chip makers produced DDR5 built on the 14 nm-class process technology. Samsung successfully upgraded the technology to build 12nm-range DRAM, a key enabler in driving market-wide adoption of DDR5 DRAM.

“With exceptional performance and power efficiency, we expect new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers, and AI-driven systems,” said Jooyoung Lee, head of the DRAM product and technology division at Samsung.

Using the latest DDR5 standard, Samsung’s 12mn-class DRAM will raise speeds up to 7.2 Gb per second or the equivalent of processing two 30-gigabyte (GB) UHD movies in just one second.

Samsung Electronics shares added 0.9 percent to 58,500 won ($45.82) in the early session on Thursday.