Samsung Electronics starts mass output of 8th-gen V-NAND for enterpriser server

[Provided by Samsung Electronics]

Samsung Electronics Co., the world’s largest flash memory provider, has started mass production of the 1-terabit triple-level cell eighth-generation vertical NAND in its eighth-generation solution for high-performance solid-stage storage devices to radically expand storage space for data servers.

The new V-NAND is dubbed to have the industry’s highest bit density and features the highest storage capacity which will enable larger storage space in the next generation enterprise server systems, the Korean chipmaker said hastening with migration as its competitors - SK hynix from home and Micron of the U.S. - have rolled out latest 4D NAND innovations in heights or 232 and 238 stories.

Samsung Electronics does not specify the stacking on the wafer layout although V-NAND is said to be hosting over 200 layers.

It plans to employ the application to the automotive market where reliability is critical. The 8-gen V-NAND will help Samsung Electronics meet rapidly growing market demand and better position itself to offer more differentiated product and solutions, which will be the basis of future storage innovations, according to SungHoi Hur, executive vice president of flash product and technology.

The company was able to attain the industry’s highest bit density by significantly enhancing the bit productivity per wafer. Based on the Toggle DDR 5.0 interface, the eighth-generation V-NAND has an input and output speed of up to 2.4 gigabits per second, 1.2 times faster than the previous generation.

By Kyunghee Park